Driver circuit to eliminate bridge leg crosstalk in SiC MOSFETs

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

A Universal Soi-based High Temperature Gate Driver Integrated Circuit for Sic Power Switches with On-chip Short Circuit Protection

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost hightemperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron sili...

Technology for Controlling Trench Shape in SiC Power MOSFETs

As the worldwide consumption of energy is increases and the global environment steadily deteriorates, society must find more efficient ways to utilize energy in order to achieve sustainable advances. Accordingly, the field of power electronics is of vital importance, and huge advances in power semiconductor devices are anticipated. Power semiconductor devices that use silicon (Si) are said to b...

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

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